QJD1210011

Manufacturer
Powerex Inc.
Supplier
VBOM
Package
Module
Description
MOSFET 2N-CH 1200V 100A SIC
Stock
In stock

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Specifications

Mfr
Powerex Inc.
Series
-
Package
Bulk
Technology
Silicon Carbide (SiC)
FET Feature
-
Power - Max
900W
Configuration
2 N-Channel (Dual)
Mounting Type
Chassis Mount
Package / Case
Module
Product Status
Active
Vgs(th) (Max) @ Id
5V @ 10mA
Base Product Number
QJD1210
Operating Temperature
-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
25mOhm @ 100A, 20V
Supplier Device Package
Module
Gate Charge (Qg) (Max) @ Vgs
500nC @ 20V
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds
10200pF @ 800V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)