STP35N65DM2
- Manufacturer
- STMicroelectronics
- Supplier
- VBOM
- Package
- TO-220
- Description
- MOSFET N-CH 650V 32A TO220
- Stock
- In stock
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Specifications
- Mfr
- STMicroelectronics
- Series
- MDmesh™ DM2
- Package
- Tube
- FET Type
- N-Channel
- Vgs (Max)
- ±25V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Product Status
- Active
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Base Product Number
- STP35
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 16A, 10V
- Power Dissipation (Max)
- 250W (Tc)
- Supplier Device Package
- TO-220
- Gate Charge (Qg) (Max) @ Vgs
- 56.3 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 650 V
- Input Capacitance (Ciss) (Max) @ Vds
- 2540 pF @ 100 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 32A (Tc)