STP18N60M2
- Manufacturer
- ST
- Supplier
- VBOM
- Package
- TO-220
- Packaging
- Tube
- Description
- TO-220-3, 22+
- Stock
- In stock
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Specifications
- Mfr
- STMicroelectronics
- Series
- MDmesh™ II Plus
- Package
- Tube
- FET Type
- N-Channel
- Vgs (Max)
- ±25V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Product Status
- Active
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Base Product Number
- STP18
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 280mOhm @ 6.5A, 10V
- Power Dissipation (Max)
- 110W (Tc)
- Supplier Device Package
- TO-220
- Gate Charge (Qg) (Max) @ Vgs
- 21.5 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 600 V
- Input Capacitance (Ciss) (Max) @ Vds
- 791 pF @ 100 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 13A (Tc)