QJD1210SA1

Manufacturer
Powerex Inc.
Supplier
VBOM
Package
Module
Description
MOSFET 2N-CH 1200V 100A SIC
Stock
In stock

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Specifications

Mfr
Powerex Inc.
Series
-
Package
Bulk
Technology
Silicon Carbide (SiC)
FET Feature
-
Power - Max
520W
Configuration
2 N-Channel (Dual)
Mounting Type
Chassis Mount
Package / Case
Module
Product Status
Obsolete
Vgs(th) (Max) @ Id
1.6V @ 34mA
Base Product Number
QJD1210
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
17mOhm @ 100A, 15V
Supplier Device Package
Module
Gate Charge (Qg) (Max) @ Vgs
330nC @ 15V
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds
8200pF @ 10V
Current - Continuous Drain (Id) @ 25°C
100A