NTC040N120SC1
- Manufacturer
- onsemi
- Supplier
- VBOM
- Package
- Die
- Description
- SIC MOS WAFER SALES 40MOHM 1200V
- Stock
- In stock
Online price and stock are only for reference, please email to sales@vbom.com to receive an official offer, thanks.
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Specifications
- Mfr
- onsemi
- Series
- -
- Package
- Tray
- FET Type
- N-Channel
- Vgs (Max)
- +25V, -15V
- Technology
- SiCFET (Silicon Carbide)
- FET Feature
- -
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Product Status
- Active
- Vgs(th) (Max) @ Id
- 4.3V @ 10mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 56mOhm @ 35A, 20V
- Power Dissipation (Max)
- 348W (Tc)
- Supplier Device Package
- Die
- Gate Charge (Qg) (Max) @ Vgs
- 106 nC @ 20 V
- Drain to Source Voltage (Vdss)
- 1200 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1781 pF @ 800 V
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)