JAN1N5809URS
- Manufacturer
- Microchip Technology
- Supplier
- VBOM
- Package
- B, SQ-MELF
- Description
- DIODE GEN PURP 100V 3A B SQ-MELF
- Stock
- In stock
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Specifications
- Mfr
- Microchip Technology
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Series
- Military, MIL-PRF-19500/477
- Package
- Bulk
- Technology
- Standard
- Mounting Type
- Surface Mount
- Package / Case
- SQ-MELF, B
- Product Status
- Active
- Base Product Number
- 1N5809
- Capacitance @ Vr, F
- 60pF @ 10V, 1MHz
- Supplier Device Package
- B, SQ-MELF
- Reverse Recovery Time (trr)
- 30 ns
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - DC Reverse (Vr) (Max)
- 100 V
- Current - Average Rectified (Io)
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If
- 875 mV @ 4 A