JAN1N5416US
- Manufacturer
- Microchip Technology
- Supplier
- VBOM
- Package
- B, Axial
- Description
- DIODE GEN PURP 100V 3A AXIAL
- Stock
- In stock
Online price and stock are only for reference, please email to sales@vbom.com to receive an official offer, thanks.
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Specifications
- Mfr
- Microchip Technology
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Series
- Military, MIL-PRF-19500/411
- Package
- Bulk
- Technology
- Standard
- Mounting Type
- Through Hole
- Package / Case
- B, Axial
- Product Status
- Active
- Base Product Number
- 1N5416
- Capacitance @ Vr, F
- -
- Supplier Device Package
- B, Axial
- Reverse Recovery Time (trr)
- 150 ns
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - DC Reverse (Vr) (Max)
- 100 V
- Current - Average Rectified (Io)
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 9 A