IRFDC20PBF

IRFDC20PBF
Manufacturer
Vishay Siliconix
Supplier
VBOM
Package
4-HVMDIP
Delivery time
12 Weeks
Packaging
Tube
Description
MOSFET N-CH 600V 320MA 4DIP
Stock
In stock

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Specifications

Mfr
Vishay Siliconix
Series
-
Package
Tube
FET Type
N-Channel
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Product Status
Active
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
IRFDC20
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4.4Ohm @ 190mA, 10V
Power Dissipation (Max)
1W (Ta)
Supplier Device Package
4-HVMDIP
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)