IRFD121
- Manufacturer
- Harris Corporation
- Supplier
- VBOM
- Package
- 4-DIP, Hexdip
- Packaging
- Bulk
- Description
- SMALL SIGNAL N-CHANNEL MOSFET
- Stock
- In stock
Online price and stock are only for reference, please email to sales@vbom.com to receive an official offer, thanks.
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Specifications
- Mfr
- Harris Corporation
- Series
- -
- Package
- Bulk
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
- Product Status
- Active
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 300mOhm @ 600mA, 10V
- Power Dissipation (Max)
- 1W (Tc)
- Supplier Device Package
- 4-DIP, Hexdip
- Gate Charge (Qg) (Max) @ Vgs
- 15 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 80 V
- Input Capacitance (Ciss) (Max) @ Vds
- 450 pF @ 25 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 1.3A (Tc)