IRFD120
- Manufacturer
- Vishay Siliconix
- Supplier
- VBOM
- Package
- 4-HVMDIP
- Description
- MOSFET N-CH 100V 1.3A 4DIP
- Stock
- In stock
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Specifications
- Mfr
- Vishay Siliconix
- Series
- -
- Package
- Bulk
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Base Product Number
- IRFD120
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 270mOhm @ 780mA, 10V
- Power Dissipation (Max)
- 1.3W (Ta)
- Supplier Device Package
- 4-HVMDIP
- Gate Charge (Qg) (Max) @ Vgs
- 16 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 100 V
- Input Capacitance (Ciss) (Max) @ Vds
- 360 pF @ 25 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 1.3A (Ta)