IRFB9N30A
- Manufacturer
- Vishay Siliconix
- Supplier
- VBOM
- Package
- TO-220AB
- Description
- MOSFET N-CH 300V 9.3A TO220AB
- Stock
- In stock
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Specifications
- Mfr
- Vishay Siliconix
- Series
- -
- Package
- Tube
- FET Type
- N-Channel
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Base Product Number
- IRFB9
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 450mOhm @ 5.6A, 10V
- Power Dissipation (Max)
- 96W (Tc)
- Supplier Device Package
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs
- 33 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 300 V
- Input Capacitance (Ciss) (Max) @ Vds
- 920 pF @ 25 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 9.3A (Tc)