IRF7342D2PBF
- Manufacturer
- Infineon Technologies
- Supplier
- VBOM
- Package
- 8-SO
- Description
- MOSFET P-CH 55V 3.4A 8SO
- Stock
- In stock
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Specifications
- Mfr
- Infineon Technologies
- Series
- FETKY™
- Package
- Tube
- FET Type
- P-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- Schottky Diode (Isolated)
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 105mOhm @ 3.4A, 10V
- Power Dissipation (Max)
- 2W (Ta)
- Supplier Device Package
- 8-SO
- Gate Charge (Qg) (Max) @ Vgs
- 38 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 55 V
- Input Capacitance (Ciss) (Max) @ Vds
- 690 pF @ 25 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C
- 3.4A (Ta)