IRF7103Q
- Manufacturer
- Infineon Technologies
- Supplier
- VBOM
- Package
- 8-SO
- Description
- MOSFET 2N-CH 50V 3A 8-SOIC
- Stock
- In stock
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Specifications
- Mfr
- Infineon Technologies
- Series
- HEXFET®
- Package
- Tube
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Power - Max
- 2.4W
- Configuration
- 2 N-Channel (Dual)
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Base Product Number
- IRF71
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 130mOhm @ 3A, 10V
- Supplier Device Package
- 8-SO
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Drain to Source Voltage (Vdss)
- 50V
- Input Capacitance (Ciss) (Max) @ Vds
- 255pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 3A