IRF6811STR1PBF
- Manufacturer
- Infineon Technologies
- Supplier
- VBOM
- Package
- DIRECTFET™ SQ
- Description
- MOSFET N CH 25V 19A DIRECTFET
- Stock
- In stock
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Specifications
- Mfr
- Infineon Technologies
- Series
- HEXFET®
- Package
- Tape & Reel (TR)
- FET Type
- N-Channel
- Vgs (Max)
- ±16V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric SQ
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 2.1V @ 35µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.7mOhm @ 19A, 10V
- Power Dissipation (Max)
- 2.1W (Ta), 32W (Tc)
- Supplier Device Package
- DIRECTFET™ SQ
- Gate Charge (Qg) (Max) @ Vgs
- 17 nC @ 4.5 V
- Drain to Source Voltage (Vdss)
- 25 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1590 pF @ 13 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C
- 19A (Ta), 74A (Tc)