IRF6644TR1
- Manufacturer
- Infineon Technologies
- Supplier
- VBOM
- Package
- DIRECTFET™ MN
- Description
- MOSFET N-CH 100V 10.3A DIRECTFET
- Stock
- In stock
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Specifications
- Mfr
- Infineon Technologies
- Series
- HEXFET®
- Package
- Tape & Reel (TR)
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric MN
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 4.8V @ 150µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 13mOhm @ 10.3A, 10V
- Power Dissipation (Max)
- 2.8W (Ta), 89W (Tc)
- Supplier Device Package
- DIRECTFET™ MN
- Gate Charge (Qg) (Max) @ Vgs
- 47 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 100 V
- Input Capacitance (Ciss) (Max) @ Vds
- 2210 pF @ 25 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 10.3A (Ta), 60A (Tc)