IRF641
- Manufacturer
- Harris Corporation
- Supplier
- VBOM
- Package
- TO-220AB
- Packaging
- Bulk
- Description
- N-CHANNEL POWER MOSFET
- Stock
- In stock
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Specifications
- Mfr
- Harris Corporation
- Series
- -
- Package
- Bulk
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Product Status
- Active
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 180mOhm @ 10A, 10V
- Power Dissipation (Max)
- 125W (Tc)
- Supplier Device Package
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs
- 64 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 150 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1275 pF @ 25 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)