IRF510L
- Manufacturer
- Vishay Siliconix
- Supplier
- VBOM
- Package
- TO-262-3
- Description
- MOSFET N-CH 100V 5.6A TO262-3
- Stock
- In stock
Online price and stock are only for reference, please email to sales@vbom.com to receive an official offer, thanks.
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Specifications
- Mfr
- Vishay Siliconix
- Series
- -
- Package
- Tube
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Base Product Number
- IRF510
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 540mOhm @ 3.4A, 10V
- Power Dissipation (Max)
- -
- Supplier Device Package
- TO-262-3
- Gate Charge (Qg) (Max) @ Vgs
- 8.3 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 100 V
- Input Capacitance (Ciss) (Max) @ Vds
- 180 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C
- 5.6A (Tc)