IRF1902PBF
- Manufacturer
- Infineon Technologies
- Supplier
- VBOM
- Package
- 8-SO
- Description
- MOSFET N-CH 20V 4.2A 8SO
- Stock
- In stock
Online price and stock are only for reference, please email to sales@vbom.com to receive an official offer, thanks.
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Specifications
- Mfr
- Infineon Technologies
- Series
- HEXFET®
- Package
- Tube
- FET Type
- N-Channel
- Vgs (Max)
- ±12V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 700mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 85mOhm @ 4A, 4.5V
- Power Dissipation (Max)
- 2.5W (Ta)
- Supplier Device Package
- 8-SO
- Gate Charge (Qg) (Max) @ Vgs
- 7.5 nC @ 4.5 V
- Drain to Source Voltage (Vdss)
- 20 V
- Input Capacitance (Ciss) (Max) @ Vds
- 310 pF @ 15 V
- Drive Voltage (Max Rds On, Min Rds On)
- 2.7V, 4.5V
- Current - Continuous Drain (Id) @ 25°C
- 4.2A (Ta)