IPP050N06N G

IPP050N06N G
Manufacturer
Infineon Technologies
Supplier
VBOM
Package
PG-TO220-3
Description
MOSFET N-CH 60V 100A TO220-3
Stock
In stock

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Specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
FET Type
N-Channel
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Product Status
Obsolete
Vgs(th) (Max) @ Id
4V @ 270µA
Base Product Number
IPP050N
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
5mOhm @ 100A, 10V
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs
167 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
6100 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)