IPI50R350CP
- Manufacturer
- Infineon Technologies
- Supplier
- VBOM
- Package
- PG-TO262-3
- Description
- MOSFET N-CH 550V 10A TO262-3
- Stock
- In stock
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Specifications
- Mfr
- Infineon Technologies
- Series
- CoolMOS™
- Package
- Tube
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Product Status
- Obsolete
- Vgs(th) (Max) @ Id
- 3.5V @ 370µA
- Base Product Number
- IPI50R
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 350mOhm @ 5.6A, 10V
- Power Dissipation (Max)
- 89W (Tc)
- Supplier Device Package
- PG-TO262-3
- Gate Charge (Qg) (Max) @ Vgs
- 25 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 550 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1020 pF @ 100 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)