IPI034NE7N3 G

IPI034NE7N3 G
Manufacturer
Infineon Technologies
Supplier
VBOM
Package
PG-TO262-3
Description
MOSFET N-CH 75V 100A TO262-3
Stock
In stock

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Specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status
Obsolete
Vgs(th) (Max) @ Id
3.8V @ 155µA
Base Product Number
IPI034N
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Power Dissipation (Max)
214W (Tc)
Supplier Device Package
PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Drain to Source Voltage (Vdss)
75 V
Input Capacitance (Ciss) (Max) @ Vds
8130 pF @ 37.5 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)