IPD65R660CFDAATMA1
- Manufacturer
- Infineon Technologies
- Supplier
- VBOM
- Package
- PG-TO252-3
- Delivery time
- 52 Weeks
- Packaging
- Cut Tape (CT) & Digi-Reel®
- Description
- MOSFET N-CH 650V 6A TO252-3
- Stock
- In stock
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Specifications
- Mfr
- Infineon Technologies
- Series
- Automotive, AEC-Q101, CoolMOS™
- Package
- Tape & Reel (TR)
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Product Status
- Active
- Vgs(th) (Max) @ Id
- 4.5V @ 214.55µA
- Base Product Number
- IPD65R660
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 660mOhm @ 3.22A, 10V
- Power Dissipation (Max)
- 62.5W (Tc)
- Supplier Device Package
- PG-TO252-3
- Gate Charge (Qg) (Max) @ Vgs
- 20 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 650 V
- Input Capacitance (Ciss) (Max) @ Vds
- 543 pF @ 100 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)