IPD33CN10NGBUMA1

IPD33CN10NGBUMA1
Manufacturer
Infineon Technologies
Supplier
VBOM
Package
PG-TO252-3
Description
MOSFET N-CH 100V 27A TO252-3
Stock
In stock

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Specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
FET Type
N-Channel
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status
Obsolete
Vgs(th) (Max) @ Id
4V @ 29µA
Base Product Number
IPD33C
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
33mOhm @ 27A, 10V
Power Dissipation (Max)
58W (Tc)
Supplier Device Package
PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
1570 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)