GAN080-650EBEZ
- Manufacturer
- Nexperia USA Inc.
- Supplier
- VBOM
- Package
- DFN8080-8
- Delivery time
- 12 Weeks
- Packaging
- Cut Tape (CT) & Digi-Reel®
- Description
- 650 V, 80 MOHM GALLIUM NITRIDE (
- Stock
- In stock
Online price and stock are only for reference, please email to support@vbom.com to receive an official offer, thanks.
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Specifications
- Mfr
- Nexperia USA Inc.
- Series
- -
- Package
- Tape & Reel (TR)
- FET Type
- N-Channel
- Vgs (Max)
- +7V, -6V
- Technology
- GaNFET (Gallium Nitride)
- FET Feature
- -
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 8-VDFN Exposed Pad
- Product Status
- Active
- Vgs(th) (Max) @ Id
- 2.5V @ 30.7mA
- Base Product Number
- GAN080
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 80mOhm @ 8A, 6V
- Power Dissipation (Max)
- 240W (Ta)
- Supplier Device Package
- DFN8080-8
- Gate Charge (Qg) (Max) @ Vgs
- 6.2 nC @ 6 V
- Drain to Source Voltage (Vdss)
- 650 V
- Input Capacitance (Ciss) (Max) @ Vds
- 225 pF @ 400 V
- Drive Voltage (Max Rds On, Min Rds On)
- 6V
- Current - Continuous Drain (Id) @ 25°C
- 29A (Ta)