2SK1859-E
- Manufacturer
- Renesas Electronics America Inc
- Supplier
- VBOM
- Package
- TO-3P
- Description
- MOSFET N-CH 900V 6A TO3P
- Stock
- In stock
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Specifications
- Mfr
- Renesas Electronics America Inc
- Series
- -
- Package
- Tube
- FET Type
- N-Channel
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Product Status
- Active
- Vgs(th) (Max) @ Id
- -
- Base Product Number
- 2SK1859
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3Ohm @ 3A, 10V
- Power Dissipation (Max)
- 60W (Tc)
- Supplier Device Package
- TO-3P
- Drain to Source Voltage (Vdss)
- 900 V
- Input Capacitance (Ciss) (Max) @ Vds
- 980 pF @ 10 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)