2SJ649-AZ
- Manufacturer
- Renesas Electronics America Inc
- Supplier
- VBOM
- Package
- TO-220 Isolated Tab
- Description
- MOSFET P-CH 60V 20A TO220
- Stock
- In stock
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Specifications
- Mfr
- Renesas Electronics America Inc
- Series
- -
- Package
- Bulk
- FET Type
- P-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Isolated Tab
- Product Status
- Last Time Buy
- Vgs(th) (Max) @ Id
- -
- Base Product Number
- 2SJ649
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 48mOhm @ 10A, 10V
- Power Dissipation (Max)
- 2W (Ta), 25W (Tc)
- Supplier Device Package
- TO-220 Isolated Tab
- Gate Charge (Qg) (Max) @ Vgs
- 38 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 60 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1900 pF @ 10 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Current - Continuous Drain (Id) @ 25°C
- 20A (Tc)